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This paper describes a process-induced damage phenomenon on the Poly-Insulator-Poly (PIP) capacitor of mixed-mode circuit during the scrubber clean after Spin-On-Glass (SOG) layer deposition. The damage mechanism is the generated charges during the scrubber clean flow through the SOG film, metal-2 stripe, via hole and to dummy metal-1 stripe, and then charge up the parasitic capacitor (dummy metal-1...
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