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Bulk FinFET is the main technology option for sub 20-nm CMOS nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant deterioration of intrinsic ESD performance. In this work, the impact on ESD performance induced by the process options beyond 20 nm nodes is explored on different ESD devices. Furthermore, experimental results of SCR devices in...
A silicon-controlled rectifier (SCR) is presented as an ESD protection device for microelectromechanical systems (MEMS) in a MEMS-on-CMOS process flow. Measurements on SiGe MEMS devices have been performed and the SCR is shown to provide the Class0 MEMS with protection levels up to 5.5kV HBM. The effect of the MEMS capacitance on the SCR robustness during ESD is investigated. Through simulations and...
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