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We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of displacement damage (DD) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors.
We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.
Intersil has developed a family of radiation-hardened, high-voltage, high-precision analog parts in a complementary bipolar process on bonded-wafer SOI. Parts in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.
We report the results of displacement damage testing using 1 MeV equivalent neutron irradiation of a range of Intersil power management and analog parts, including an operational amplifier, voltage reference, linear voltage regulators, comparator, power MOSFET driver, pulse width modulators, analog switches and processor supervisory circuit.
We provide a discussion of the Controller Area Network (CAN) networking protocol as used in space applications and then report the results of destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL72027SEH CAN bus transceiver. We conclude with a brief discussion of 60Co total ionizing dose (TID) testing results.
We report the results of SEE and low and high dose rate total dose testing of the Intersil ISL75052SEH low dropout regulator (LDO) together with a discussion of electrical specifications and fabrication process.
We report the results of destructive and nondestructive heavy ion single-event effects (SEE) testing of the Intersil ISL71840SEH hardened 16-channel analog multiplexer, prefaced by a brief discussion of its functionality, electrical specifications and fabrication process.
We report results of destructive and nondestructive SEE testing and total dose testing of the ISL70003SEH integrated point of load (POL) converter, together with a discussion of the part's electrical specifications and fabrication process.
We report the results of low and high dose rate total dose and SEE testing of the Intersil ISL70227RH low-noise operational amplifier together with a discussion of the part's electrical specifications and wafer fabrication process.
We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.
We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.
We report the results of low and high dose rate 60Co testing of a total of eight Intersil parts, including dielectrically isolated and junction isolated types. The MIL-STD-883 procedure for ELDRS sensitivity determination was used.
We report details of a low dose rate wafer by wafer acceptance testing program proposed for Intersil RHA products, including sampling and test methods. We also discuss the design of a vault-type 60Co irradiation facility.
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