Search results for: Ronald Pease
chapter
We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of ×3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s...
article
IEEE Transactions on Nuclear Science > 2011 > 58 > 6-1 > 2983 - 2990
We present results on the effects of ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of commercial, radiation hardened, and ELDRS-free devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different part types. The magnitudes of the low dose rate enhancement varied substantially. The most notable case showed dose rate sensitivity in the functional failures...
chapter
The total dose response of three bipolar low dropout voltage regulators is presented for a variety of irradiation and anneal test conditions. Two of the part types were chosen for their known enhanced low dose rate sensitivity (ELDRS) and the third for its known radiation tolerance. The two ELDRS parts show a dramatic sensitivity to irradiation bias with the all leads shorted being worst case at low...
