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This paper reports heavy ion induced single event effects (SEE) results for a variety of microelectronic devices targeted for possible use in JPL spacecraft. The compendium covers devices tested within the timeframe of August 2015 through July 2017. It is formatted as an update to the SEE compendia JPL has historically published.
The results of recent Single Event Effect (SEE) testing of newly available power GaN HEMTs are presented. High power GaN HEMT devices from two manufacturers were tested with heavy ions. Destructive SEE was observed in all test devices. The failure voltage threshold, cross-section, and angular dependence are investigated.
This paper reports heavy ion, proton, and laser induced single event effects (SEE) results for a variety of microelectronic devices targeted for possible use in JPL spacecraft. The compendium covers devices tested within the timeframe of August 2012 through February 2015. It is an update to the SEE compendia JPL has historically published.
The qualification efforts and results for three 24 bit analog-to-digital converters (ADCs) are presented. These devices demonstrate a noticeable advancement in radiation hardness for the technology with two of the devices exhibiting no Single-Event Latchup.
This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA spacecrafts. The compendium covers devices tested within the years of 2010 through 2012.
UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following exposure to ionizing radiation separates SEU-like mechanisms that generate anomalous decreases in erasure time from the uniform effects of TID.
Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 55 MeV protons, 2) a detailed...
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