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A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method, phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed, melt temperature, phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800 g stoichiometric high...
InP substrates have been indispensable to both optical and electronic devices. The cost reduction in the manufacturing process of these devices and the increase in size of IC chips have strongly required a larger diameter of these substrate wafers. Promoted by this requirement, InP single crystal technology has been rapidly developed. In the present paper, the development and key technology of large...
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