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Comprehensive finite element analysis (FEA) modeling is carried out to improve the performance of critical designs of wafer level chip scale package (WLCSP). First, a design with one layer redistribution layout (RDL) copper with etched pocket in the non-covered UBM area and one layer polyimide structure (1Cu1Pi design) is investigated. Different polyimide layouts, copper thicknesses, pocket parameters...
Transient responses of 3D stacked-die package with through silicon via (TSV) structure under board level drop test load following the JEDEC standard are investigated using the Input-G finite element simulation method. In order to reduce the finite element mesh size the stacked-die package under investigation is modeled with details while the others are simplified as blocks with equivalent material...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through a numerical approach. The driving force for electromigrationinduced failure includes the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient, which were neglected in many of the existing studies on electromigration. The parameter study...
The shear test under high strain rate is becoming a popular approach to investigate the fracture behaviour of a thermally attached solder ball under different strain rates. However, despite a substantial number of experimental tests being conducted recently, only a few numerical simulation works have been published. The lack of high performance computational analysis methods applicable to the evaluation...
Based on MEMS technology and finite element analysis (FEA), we design multi-kinds of efficient integrated functional elements utilizing two-dimensional (2-D) photonic bandgap (PBG) structures at 0.5 Terahertz (THz). The functional elements are integrated in the same silicon substrate using the micromachining technology for Micro-Electro-Mechanical Systems (MEMS), which can be used to construct easily...
A dynamic substructural method (DSM) is developed to simulate the board level drop test of a wafer level chip scale package (WL-CSP). Parametric study on package location at the test board, printed circuit board (PCB) thickness and WL-CSP package thickness is conducted in the board level drop test simulations. The peeling stress and first principle stress of the solder joints are checked and discussed...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through numerical approach. The electronic migration formulation that considers the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient has been developed. The parameter study for the Al line geometry with different width and...
With the current trend of less expensive, faster, and better electronic products, it has become increasingly important to evaluate the IC package and system performance early in the design stage using simulation tools. For the solder joint subjected to cyclic stresses generated during the thermal cycling, its reliability depends on its resistance to creep and fatigue. The approach for simulation in...
This paper proposes a new prediction method for electromigration induced void generation of solder bumps in a wafer level chip scale package (WL-CSP). The methodology is developed based on discretized residual weight method (RWM) in a user-defined finite element analysis (FEA) framework to solve the local electromigration governing equation with the variable of atomic concentration. The local solution...
This paper studies the numerical simulation method for electromigration void incubation and afterwards void propagation based on commercial software ANSYS Multi-physics and FORTRAN code. The electronic migration formulation considering the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic concentration gradient has been developed for the electromigration...
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total...
Moisture sensitivity of packages is an area of great concern for the electronics industry. The differential swelling of materials in a non-hermetic package during manufacture, handling, storage, assembly, and then also during its lifetime can cause stresses large enough to damage the package. A moisture automation analysis system is developed based on ANSYS Workbench and Excel platform in this paper...
In this paper, a lead frame based system in package (SIP) for power management is examined. This package is built using multiple die types including power IGBTs, diodes, and IC controllers. To maximize product performance the power components use an ultra thin back grind. Thin dies minimize RDS(on), maximize thermal performance, and minimize the board standoff height by allowing the package to be...
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