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We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs and identify the most promising configuration for the access transistors. The same template devices are used to investigate the $\text{V}_{\rm DD}$ range,...
Tunnel-FETs are studied in a mixed device/circuit simulation environment. Model parameters calibrated on experimental DC as well as pulsed characterizations are then used for 6T SRAM cells investigation. Issues concerning fabricated devices, as the ambipolarity and the uni-directionality, are addressed at both device and circuit levels. Our results suggest that ambipolarity needs to be solved through...
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