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This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore,...
This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)-oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up...
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