The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we investigate the impacts of intrinsic device variations on FinFET subthreshold SRAMs, including the conventional tied-gate 6T SRAM, tied-gate 10T Schmitt Trigger based SRAMs, and recently proposed independent-gate controlled 8T Schmitt Trigger based SRAMs. The impacts of intrinsic random device variations, including Fin Line-Edge Roughness (LER) and Work Function Variation (WFV), on...
We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the “stacking-like” property of split-gate super-high-VT FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.