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Recently, in order to achieve higher performance and higher density in both CMOS/Logic and flash memories, some three-dimensional structures have been paid much attention. In these structures, the Si surfaces with the surface orientation except (100) are used for the channel of transistors/cells. The reliability depending Si surface orientation has been previously reported and worse reliability of...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
The objective of this paper is to clarify the primary roles of high-k layer and of interfacial layer on the TDDB lifetime in order to provide a guideline for realizing adequate TDDB reliability and also for the further high-k material selection. HfAlO(N)/SiO(N) and HfON/SiON stacked gate dielectrics has been fabricated with various deposition conditions and thicknesses. Electrical characteristics...
Negative bias temperature instability (NBTI) and its recovery phenomenon in ultrathin silicon oxynitride (SiON2) films were investigated. To discuss the influence of nitrogen incorporation into silicon dioxide films, we used NO-nitrided SiON and plasma-nitrided SiON. As a result, it was found that the recovery for plasma-nitrided SiON is less marked than that for NO-nitrided SiON, although NBTI can...
Threshold voltage (V,h) shift under the NBT-stress of TaN gated HfO2/SiO2 stacked gate dielectrics has been studied by conventional DC and the pulsed measurements. A large Vth shift in the early stage of stress occurs typically within 1 s by the fast transient charging under the stress as well as during the Vth measurement. Contributions of both charging components strongly depend on the film quality...
In this paper, we have investigated the correlation between released hydrogen from Si/SiO2 interface and trap creation in bulk SiO2. The key point of these experiments is that hydrogen release from the interface is performed without trap creation in bulk SiO2 by injected hot carriers. Therefore, negative bias temperature (NBT) stress or substrate hot electron (SHE) stress was utilized to release hydrogen...
Dielectric breakdown in high-k gate dielectrics is discussed from the viewpoints of its mechanism and accurate TDDB lifetime assessment. As for the dielectric breakdown mechanism, we have proposed the generated subordinate carrier injection (GSCI) model. The GSCI model considers that injected subordinate carriers degrade the dielectrics and that breakdown occurs when their number reaches a threshold...
To establish the reliability model of the high-k gate dielectrics in the EOT-scaled regime, the gradual increase of the leakage current during the stress time, which makes the precise detection of the breakdown harder, has been studied. It has been clarified that multiple occurrence of soft breakdown (SBD) at plural local spots is the cause of the gradual increase, along with a large initial leakage...
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