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This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2nd generation tri-gate transistor and the 4th generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.
In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK process demonstrated NMOS and PMOS...
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