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Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel...
A simple, compact, and robust refractive index sensor is developed, by twisting a pair of silica microfibers to form a coupling device. The transmission spectrum of the device is highly sensitive to the surrounding refractive index and the highest sensitivity obtained is -2377 nm/refractive index unit (RIU), at the refractive index value of - 1.3680, for the fibers with diameter of ~4.2 μm, and the...
Polymer thin-film transistors (PTFTs) based on MEH-PPV semiconductor are fabricated by spin-coating process and characterized. Gate-bias and drain-bias stress effects at room temperature are observed in the devices. The saturation current decreases and the threshold voltage shifts toward negative direction upon the gate-bias stress. However, the saturation current increases and the threshold voltage...
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