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A 60 GHz low noise amplifier (LNA) in standard 0.13 μm CMOS process is demonstrated. A shunted inductor is applied to resonate out the parasitic capacitor at the drain node of the first common source stage which effectively reduce the NF and enhance gain. This thin-film microstrip LNA achieves a measured power gain of 15.8 dB, a noise figure of 5.71 dB, an output 1-dB compression point (OP1dB) of...