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Optimization of source/drain (S/D) extrinsic resistance of ultra-thin body (UTB) silicon-on-insulator (SOI) MOSFETs with recessed and/or elevated suicide contact structure is investigated through new simplified physical compact modeling and 2-dimensional simulation calibrated with 90-nm SOI technology. It is found that the optimum suicide contact can be located below SOI layer surface in elevated...
The DARHT II accelerator utilizes a fast closing vacuum valve to block x-ray converter target debris from entering the accelerator. An optical scattering diagnostic was developed to measure the arrival time of the debris at the fast valve to verify that the valve closure time is adequate to block the debris.
This work presents SOI finFETs with fin width (Dfin) scaled to sub 15nm. The process flow provides robust Dfin scaling as depicted by the universal electrostatic scaling of the DIBL and sub-threshold swing (SS). The high field long channel mobility drops by ∼6% with Dfin scaling, however, DIBL and SS improves by ∼1.5X and ∼2X, respectively, for 20nm channel length n/pfinFETs. The effective current...
Diagnostic detectors such as B-dot and E-dot probes have been used in pulse power and accelerator applications for decades. The DARHT II Accelerator utilizes arrays of B-dot detectors as a means to determine beam current and position. Unique problems arise when using digital recording to capture these signal waveforms. Bit error and baseline reference stability due to noise in the recording devices...
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