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In this paper, we propose a new Voltage- programming pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for an active matrix organic light-emitting diode (AMOLED). The proposed a-Si:H TFT pixel circuit, which consists of four p-type switching TFTs, one n-type driving TFT, two additional control signals and one storage capacitor, successfully compensated the OLED...
Polycrystalline silicon thin-film transistors (TFTs) can be improved by integrating DRAM on chip. However, the TFT's poor capacitance means that traditional DRAMs are infeasible, because they require a capacitor. An alternative, the one-transistor DRAM (1T-DRAM), is promising because it avoids the capacitor by instead storing the logical value as holes trapped in the body region. This letter proposes...
In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 degK...
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