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In this paper, we present a highly scaled bulk metal-oxide-semiconductor field-effect transistor with block oxide (BO) and source/drain (S/D)-tied structure that meets the International Technology Roadmap for Semiconductors requirements for high-performance devices. This new device requires only a simple BO fabrication process using SiGe-Si epitaxial growth with selective SiGe removal and requires...
We present a novel bulk-Si dual-channel source/drain-tied (DCSDT) MOSFET with the multiple epitaxial growth of SiGe/Si layers, and selective SiGe removal to form the block oxide island (BOI). Based on the simulations, the SDT scheme achieves better DC characteristics than body-tied (BT) scheme such as: Ion (20% increased), Ioff (71% reduced), Rsd (5.3% decreased), S.S. (19% improved), DIBL (35% reduced),...
An ultimate n-shaped source/drain (π-S/D) metal-oxide semiconductor (MOS) transistor is proposed in this paper. The method used to fabricate the proposed π-S/D transistor is based on both the classical and modern techniques (such as, Si-SiGe epitaxial growth, selective SiGe removal, etc.) that can be controllable and repeatable. Also, a new and simple process without the need of an additional mask...
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