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We present a new vertical sidewall MOSFET with embedded gate (EGVMOS) to reduce the parasitic capacitance which is the major disadvantage in a conventional VMOS. According to simulations, our EGVMOS can not only achieve about 86.34% and 54.76% reduction at Cgd at VDs = 0.05 V and 1.0 V respectively, but also improves the device reliability due to suppressed kink effects, in comparison with a conventional...
This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-tied scheme, resulting in improved thermal stability. In addition, S/D-tied BG MOSFET not only diminishes...
In this work, a novel fully depleted silicon-on- insulator MOSFET with block oxide (bFDSOI) is proposed to investigate the influence of Si-body thickness on the characteristics of the device. Based on the two-dimensional (2-D) simulation results, the proposed structure exhibits better ultra-short-channel behavior such as reduced drain-induced barrier lowering (DIBL) and better subthreshold swing when...
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