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This paper presents a highly scalable π-shaped source/drain (π-S/D) quasi-silicon-on-insulator (SOI) MOSFET and summarizes its preliminary characteristics compared with the recessed S/D SOI MOSFET and international technology roadmap for semiconductors (ITRS) roadmap values. SiGe-Si epitaxial growth, Si and SiGe etching, growth of epitaxial Si, and selective SiGe removal are used to form the π-S/D...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs)...
In this paper, the influence of block oxide width (WBO) variations on a newly designed 40-nm gate-length silicon-on-partial-insulator field-effect transistor with block oxide (bSPIFET) was demonstrated and characterized. By utilizing the block oxide (BO) enclosing the sidewall of the Si body, the charge sharing from the source/drain (S/D) regions for a bSPIFET can be significantly reduced. Essentially,...
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