The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (Lbo) and the height (Hbo). According to the simulation results, the variation of Lbo and Hbo strongly affects the device characteristics, such as the sub-threshold swing, threshold voltage, on-state drain current (Ion), and the off-state drain current (Ioff). This is because...
In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel planar-type body-connected FinFET with 45 nm gate length, for which the DC behavior exhibits better ION-IOFF current ratio and improved transconductance performance when compared with a planar-type FinFET. The RF characteristics are carried out as functions of gate voltage (VG) and drain...
In this study, junctionless technology employed for fabricating pseudo tri-gate vertical (PTGV) MOSFETs is proposed and the RF/analog performance is also investigated and demonstrated. According to simulation results, the excellent performances such as high transconductance (gm), high cut-off frequency (fτ), and high transconductance generation factor (gm/Id) arc achieved. The numerical results also...
In this study, we propose a novel bulkSi-based device called dual-channel body-tied (DCBT) MOSFET using the self-aligned process without any extra masks. It reveals that our proposed DCBT FET has excellent S.S., decreased Isd,leak, lower Rsd, reduced Jg,limit, smaller lattice temperature, and higher thermal stability when compared with its DC counterpart. And, for the first time, we will investigate...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.