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Computational study of the InP/InGaAs single photon avalanche diode (SPAD) is performed using the additional numerical modeling employed as an extension to the TCAD software. A new simulation environment is employed to model the discrete events such as dark count rate (DCR) and photon detection efficiency (PDE) and is extensively tested for a range of temperatures and 1D structure parameters. DCR...
The linear characteristics of the InP/InGaAs avalanche detectors are modeled and numerically analyzed by developing a new TCAD-based simulation environment. Temperature dependency of the impact ionization coefficients in InP are fitted for 200 K to 300 K temperature range. Adjustment of the model parameters for the simulations of the dark current sources in InP and InGaAs materials is performed in...
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