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This work presents a straightforward approach to model the dynamic I–V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data...
This paper gives a comprehensive analysis of modeling of the FinFET forward transmission coefficient by using artificial neural networks. Models for the whole device and the actual device obtained after applying the de-embedding procedure the effects of pads, transmission lines, and substrate have been developed and validated in a wide range of bias conditions for frequencies up to 50 GHz. Special...
The most common approaches for modeling semiconductor devices are compact modeling and equivalent circuit based modeling. The former approach has its origin in analogue Si circuits, whereas the latter stems from high-frequency applications using III-V compound devices, such as HEMTs. Due to the increasing RF performance of Si devices, RF modeling engineers have been tailoring equivalent circuit based...
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