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Neural networks are information processing models based on the human brain, and they have been activity studied. However, in order to realize the hardware of the neural network, it is necessary to achieve high integration. In this study, we fabricated synapses for neural networks using the Ga-Sn-O (GTO) thin films, which is rare-metal-free amorphous oxide semiconductor. The synapses are planar type,...
We have developed a planar device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. First, we formed the planar device on a glass substrate. Next, we formed it on an LSI wafer. Both devices shows proper uniformities of film thicknesses and sufficient degradations of electric characteristics, which can be utilized for modified Hebbian learning proposed by us. These results...
We have developed a cross-point device using In-Ga-Zn-O (IGZO) semiconductor for synapse element in neural network. Horizontal 80 and vertical 80 metal lines make 6400 cross-point synapse integrated on a glass substrate. The electrical conductance gradually degrades by flowing current, which is available for modified Hebbian learning.
A new fan-out adapter has been fabricated by the novel jacket removing system. The results clarified that the approach could reduce the packaging size dramatically.
A novel fiber jacket removing system with a CO2 laser has been proposed to realize compact packaging of optical components. The fundamental conditions and procedures to remove fiber jackets were clarified experimentally, and the procedures were applied to fabricate a new compact fan-out adapter. The fan-out adapter can connect optical components compactly and effectively, when the packaging should...
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