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The influence of the width of polysilicon mesapiezoresistors with dielectric insulation and silicon dioxide passivation on their sheet resistance and piezosensitivity is investigated experimentally. A strong increase in the sheet resistance upon decreasing the width of mesapiezoresistors is found in the range 3 μm ≤ W ≤ 10 μm, which is associated with a decrease in the cross section and impurity segregation...
The influence of width of polysilicon mesa-piezoresistors with dielectric insulation on their surface resistivity and piezosensitivity is studied experimentally when forming the passivating layer of thermal silicon oxide. It is demonstrated that the surface resistivity strongly increases when decreasing the width of mesa-piezoresistors in the interval of 3 ≤ W ≤ 10 μm. This fact concerns the decrease...
The effect of dihedral angles in the junction region of tensoresistive layer to contact pads on strain distribution in mesa-piezoresistor body was studied using the finite element method. Influence of mesa-piezoresistor geometry on its sensitivity was demonstrated.
The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. The strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.
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