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We report a $\sim 4\; \text{dB}$ enhancement in signal-to-noise ratio of current-perpendicular-to-the-plane giant magnetoresistance sensors with Heusler alloy magnetic layers due to insertion of an InZnO electrically conductive oxide into an Ag-based metallic spacer layer. Signal and noise device characterization at various magnetic bias conditions shows that this enhancement arises from an increase...
This paper discusses magnetic tunnel junction (MTJ) which has attracted great interest due to its high tunneling magnetoresistance (TMR) ratio, where sputter deposition of MgO between CoFeB electrodes is a strong candidate. The trap charge in the MTJ structure will change the tunneling path and cause serious parametric drift. This paper proposes MOS capacitors which can independently determine the...
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