The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Silicon carbide (SiC) MOSFETs have been widely studied in high frequency applications. The switching performance, however, is limited with the existence of the parasitic elements. One critical issue is the susceptibility of the gate-source voltage to the parasitic elements, rendering the possibility of spurious operation of the SiC MOSFETs. This paper conducts comprehensive investigations on the impact...
The efficiency improvement of the energy router, based on the solid state transformer, is one of the significant issues for applications in the future power networks. Power losses of switching devices play a key role about the efficiency and have a close relationship with the device, topology and control of the energy router, especially under the diversity of structure. Based on models of actual Si...
This paper presents the design and implementation of an ultra-high efficient two-stage PV converter consisting of full-bridge DC/DC converter as the first stage and three-level T-type DC/AC inverter as the second stage. Firstly, the operation principles of full-bridge DC/DC converter and DC/AC converter are given in this paper. Then the control algorithm of the converter is analyzed and implemented...
The nonlinear junction capacitances of power devices are critical for the switching transient, which should be fully considered in the modeling and transient analysis, especially for high-frequency applications. The silicon carbide (SiC) MOSFET combined with SiC Schottky Barrier Diode (SBD) is recognized as the proposed choice for high-power and high-frequency converters. However, in the existing...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.