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In the past years new power switching devices based on wide bandgap materials like silicon carbide (SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits. This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisation of a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviour...
As already shown in previous publications (e.g.), Silicon Carbide transistors offer a great potential for reducing system costs of Photovoltaic-inverters by increasing the efficiency and decreasing the size of the heat-sink and the inductive components. The following document shows how the knowledge gained hereby now is implemented in the development of a PV-inverter optimized for the use of Silicon...
This paper deals with the current trends in photovoltaics (PV) which are the use of new Silicon Carbide (SiC) transistors (sections II, III and IV) and the implementation of module integrated electronics (sections V and VI).
Photovoltaic (PV) inverters convert the DC current of solar generators into AC current and feed it into the grid. There are three basic inverter topologies: inverters with low frequency (50/60 Hz) transformer (LF), inverters with high frequency transformer (HF) and transformer-less inverters (TL). The European market is dominated by transformer-less types (80%), in Japan approx. 50% of the inverters...
In this paper the implementation and the performance of 1200 V / 30 A / 65 mOmega normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si-IGBTs. The JFETs' low switching energy and on-resistance lead to an improvement of efficiency and a reduction of costs and weight of PV-inverters.
Experimental C/V curves are presented for gate-controlled diodes in silicon on sapphire and are analysed with a numerically implemented model, which shows the effects of a fixed layer of charge at the silicon-sapphire interface.
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