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Transient behaviors of poly-bound diode subject to fast ESD events such as the Charged Device Model (CDM) are characterized using pulses generated by the very-fast transmission line pulsing (VFTLP) tester. The effects of changing diode's dimension parameters on the overshoot voltage and turn-on time are studied. The correlation between the poly-bound diode failure and poly-gate configuration under...
Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode's dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration...
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