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The effects of power and pressure on radiofrequency (RF) diode sputtering in oblique-angle (80°) deposition arrangement are presented. Oblique-angle sputtering of ZnO:Ga (GZO) thin films resulted in a tilted columnar crystalline structure and inclination of the c-axis by an angle of approximately 9° with respect to the substrate. This improved their structural, electrical and optical properties in...
A study of the effect of substrate temperature on oblique-angle sputtered galium-doped zinc oxide (GZO) thin films was carried out. Both the oblique-angle sputtering and the substrate temperature lowered the resistivity of GZO thin films down to 4 × 10-3 Ωcm together with an increase of their optical transmittance over 90%.
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
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