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Novel bi-layered solid electrolytic based resistive switching memory device using Al/Cu/Ge0.2Se0.8/Ta2O5/W structure has been investigated for the first time. The tight distribution of resistance states and threshold voltage are achieved as compared to that of single layer Ge0.2Se0.8 solid-electrolyte. Stable endurance of ≫3.5×105 cycles and excellent retention characteristics with a low compliance...
Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive...
The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-?? HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ~ 1.6 ?? 1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and...
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