The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we present a micromagnetic analysis of the new MRAM system for high Gb/Chip. Proposed MRAM has a strong switching field owing to two poles added on both sides of the free layer, just like perpendicular magnetic recording heads on the hard disk drive system. By comparing conventional MRAM and new MRAM, we show that new MRAM has a strong switching field on the same injected current.