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In many applications, such as motor drives and integrating distribute power sources into a grid, there are two or more ac sources or loads. The conventional solution is to use separate modular multilevel converters, which increases cost and volume of system. Thus, a novel nine-arm modular multilevel converter is proposed in this paper, which operates as two conventional modular multilevel converters...
In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58μm, only 70%...
A low specific on-resistance integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual...
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