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80nm InAs/In0.7Ga0.3As HEMTs using Pt gate sinking were characterized for ultra-low power low noise applications. While the epitaxial structure of the device was optimized, the reduction of gate-to-channel distance was achieved from gate sinking process. The device exhibited very high drain current density of 1066 mA/mm and maximum gm of 1900 mS/mm at Vds = 0.5 V. Excellent fT (fmax) up to 113 GHz...
80-nm InAs channel HEMTs with different lattice matched sub-channels, In0.53Ga0.47As and In0.7Ga0.3As, have been fabricated. The device with InAs/In0.7Ga0.3As composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias VDS = 0.8 V. The high current gain cutoff frequency (ft) of 360 GHz and maximum oscillation frequency (fmax) of 380 GHz...
80-nm-gate In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel high-electron mobility transistors (HEMTs) fabricated using platinum (Pt) buried gate as the Schottky contact metal were evaluated for RF and logic application. After gate sinking at the 250degC for 3 minutes, the device exhibited a high gm value of 1590 mS/mm at Vd = 0.5 V and the current gain cutoff frequency fT was measured to be 494 GHz...
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