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With the shrinking of technology node, the data retention time of DRAM (DRAM) cells is widespread. Thus, the number of the cells with data retention faults is increased. In this paper, therefore, we propose a built-in self-repair (BISR) scheme for DRAMs using redundancies with physical and logical reconfiguration mechanisms. Spare rows and columns with physical reconfiguration mechanism are used to...
Built-in-self-repair is an enabling approach for improving memory yield in system-on-chip designs. Reducing the overhead of repair circuits while minimizing the test and repair time is of prime importance. This article presents a fast parallel repair methodology for SoC memory cores and an associated automation framework.
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