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A thermal robust ReRAM (Resistive RAM) with a new method for suppressing read disturb was investigated. The switching property and ‘on’ resistance were scarcely varied by the operation temperature up to 200°C. Asymmetric structure such as Ru/TiO2/Ta2O5/TiO2/W showed ‘off’ switching only when a positive voltage was applied on the Ru electrode. The ‘reverse bias’ read operation, applying the positive...
We propose a new approach for improving the operating margin of Ta2O5/plasma oxidized TiO2 stacked unipolar ReRAM. It was found that the reset voltage (switching from low resistance state to high resistance state) can be minimized by using local minimum against the resistance of the low resistance state. In addition, weakening the plasma oxidation condition reduced the power consumption and the variation...
The controllability of resistance in the set (low resistance) and reset (high resistance) states of Ta2O5/TiO2 resistive random access memory (ReRAM) was investigated to achieve low-voltage and multilevel operation. Since resistance in a set state tended to decrease due to the history effect of the lowest resistance, multilevel operation with a controlled set resistance was found to be difficult to...
The Effect of the bottom electrode of ReRAM with a Ta2O5/TiO2 stack on noise and retention was investigated. The current fluctuation due to complex random telegraph noise (RTN) resulted in errors in the read-out with multi-level operation. We clarified that the Ti diffusion into the TiO2 layer from the bottom electrode increased the trap density and thus degraded current stability. The increased density...
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