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We present a new field effect mechanism on IGIDL in NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.
Various types of flash memory devices are fabricated on silicon-on-insulator (SOI) substrate for efficient isolation and higher program efficiency nowadays. Since metal-oxide-semiconductor field effect transistors (MOSFETs) on SOI has a floating body and corresponding effects, it is quite difficult to predict the program efficiency of SOI-based NOR-type flash memory device making use of channel hot...
In this study, a nonvolatile memory (NVM) device with a novel 3-dimensional structure is introduced. The device is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between pillars can be removed and additional gates called cut-off gates help the operation. In this sense, GTB NVM device is considered as the...
A novel vertical channel double split-gate (VCDSG) flash memory is investigated. As well as the single-level operation, this device is especially useful for the multi-level cell (MLC) to operate as a 4-bit/cell. Operation and fabrication issues related with the 3-dimensional cell structure are addressed. For high density integration, simple contact array scheme is proposed.
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