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Lithographic wavelength of 193 nm has been used for past few generations of patterning and is likely to remain in use for next few technology generations (at least till 28 nm technology half-node) as well. This deep sub-wavelength patterning has resulted in wafer shapes not resembling drawn rectilinear shapes. The resulting non-rectangular devices and wires are not handled by current generation modeling...
Yield loss caused by random defects is an important manufacturability concern. Random yield of modern integrated circuits is associated with layout sensitivity to defects defined as the ratio of critical area to the overall layout area. This paper proposes a methodology to predict random yield with high fidelity based on a stochastic layout sensitivity model that uses very basic layout information...
Design rules have been the primary contract between technology and design and are likely to remain so to preserve abstractions and productivity. While current approaches for defining design rules are largely unsystematic and empirical in nature, this paper offers a novel framework for early and systematic evaluation of design rules and layout styles in terms of major layout characteristics of area,...
During semiconductor manufacturing, particles undesirably depose on the surface of the wafer causing "open" and "short" defects to interconnects. In this paper, a third type of defects called "interconnect narrowing" defect is defined. Interconnect narrowing occurs when a defect intervenes the lithographic printing of interconnects causing the formation of a narrow interconnect...
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