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Millimeter waves (MMWs), operating at 30–300 GHz band, are very promising to the next-generation 5G wireless communication systems, enabling data rates of multi Gbps per user. Photonic technology is increasingly considered to play a key role in a wide range of MMW devices, modules, and subsystems that are essential to successfully build next generation MMW-based 5G networks. This work considers the...
This paper demonstrates the measurements of direct modulation bandwidth of a bistable racetrack semiconductor ring laser. It is exhibited using the phenomenon of optical injection-locking in the master-slave layout. Semiconductor ring laser is employed as the slave laser. Modulated signal is injected at 1530 nm, which is about 20nm away from the main lasing mode. The frequency response of the main...
Effects of the size of semiconductor ring laser on the strength of optical injection locking are discussed. Theoretical model has been developed to study the influence of for frequency response of locked semiconductor ring laser in the master slave configuration using phase modulation of master laser is discussed. In the unidirectional regime the locking range of semiconductor ring laser becomes wider...
Strength of optical injection locking has been investigated theoretically using different sizes of micro ring laser. In the unidirectional regime, when smaller size micro ring laser is used the locking range becomes wider.
Bandwidth of optical injection locked (OIL) semiconductor ring laser (SRL) is enhanced from 15GHz to ≫40GHz using master-laser modulation. Unidirectional SRLs allow monolithic integration of OIL scheme as it produces no feedback towards the master-laser.
This paper proposes and demonstrates an all-optical static random access memory (SRAM) cell using a bistable semiconductor ring laser set-reset flip-flop integrated with four SOAs at each output. Read and write operation at 1Gb/s are achieved with extinction ration ≫10dB.
This paper describes all-optical digital logic AND and XOR gates based-on cavity-enhanced four-wave-mixing in an integrated semiconductor ring laser at 2.5Gb/s. Error free operation with extinction ratio higher than 10dB is achieved.
The all-optical response of a semiconductor ring laser to two optical injections demonstrates very digital hysteresis with externally controllable switching threshold, enabling the device to be used for all-optical pulse regeneration.
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