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The design of a 3.0-7.5 GHz UWB CMOS power amplifier (PA) for group 1~3 MB-OFDM UWB applications in TSMC 0.18-??m CMOS technology is presented. The UWB PA proposed in this paper uses a current-reused technique to enhance the gain at the upper end of the desired band, and the resistive feedback at the second stage is used to obtain gain flatness. The shunt-shunt feedback is used to enhance bandwidth...
This paper describes the design of a 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using TSMC 0.18-mum CMOS technology. The UWB PA proposed in this paper employs cascode topology with an additional common source stage to achieve high power gain. The current reused technique is implemented to enhance the gain at the upper end of the desired band for gain flatness and...
This paper presents a comparison between bipolar and NMOS transistor to get high linearity amplifier. Using bipolar transistor, the amplifier has high linearity, and it does not sensitive to component variations. High linear amplifier using bipolar transistor has been designed and was fabricated using TSMC 0.18 um CMOS 1P6M process. The high linearity amplifier exhibits measurements results as 10...
This paper presents a simple architecture for 8-bit digital controlled oscillator (DCO) on 3-stages ring topology in TSMC 0.18 um CMOS technology. A new schematic of tristate inverter is also proposed. The proposed tristate inverter has higher switching speed and low power consumption as compared to conventional one. The control digit changes the driving current that provides large tuning range from...
This paper presents a simple architecture for 8-bit digital controlled oscillator (DCO) on 3-stages ring topology in TSMC 0.35 mum CMOS technology. A new schematic of tristate inverter is also proposed. The proposed tristate inverter has higher switching speed and low power consumption as compared to conventional one. The control digit changes the driving current that provides large tuning range from...
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