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High-Mobility n-MOSFET options with Ge and InGaAs channels are of intense interests. As the well-known interfacial trap (Dit) problem appears now contained, new challenges are emerging from above the interface. The evidence of oxide border traps (BT) in high-k dielectrics and its effect on the on-state performance of Ge and InGaAs n-MOSFETs are presented in this study through combined trap and transport...
The present work discusses the electrostatic integrity of Insulated Shallow Extension Silicon On Void (ISESOV) MOSFET examine by calculating the 2D potential in the channel region using Poisson's equation. The complete drain current model incorporating velocity overshoot effect and the Channel Length Modulation effect (CLM) has also been developed for channel length down to 32nm. Furthermore, the...
In this paper, we present the simulation study of RF linearity of gate stacked Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET and compared it with the Insulated Shallow Extension (ISE) and silicon On Nothing (SON) MOSFET using ATLAS 3D device simulator. ISE architecture along with the SON MOSFET proves to be better candidate for suppression of Short Channel Effects (SCEs).
In this paper, the impact of multi-layered gate design assimilation on Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET has been studied for wireless applications in terms of linearity performance metrics, using device simulators: ATLAS and DEVEDIT, and compared with conventional Trapezoidal Recessed channel (TRC) and GME-TRC MOSFETs. Simulation study reveals that GME-TRC MOSFET...
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