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It is shown that relief forms of surface and character of distribution of potential irregularities of epitaxial gallium arsenide and barrier Au-metallization have fractal geometry, which in a local approximation must be defined as geometry and homogeneity of metal -semiconductor contact interfaces with Shottky barrier. This must be considered while designing the submicron and nano metal-semiconductor...
With the use of a term of fractal surfaces there was showed that real metal-semiconductor interfaces with Shottky barrier had been provided with a fractal geometry that in a local approximation had influenced greatly on a behavior of static volt ampere characteristics of metal-semiconductor contacts with Shottky barrier, exerting in an anomalous increase of direct currents, a decrease of series resistance,...
With the use of a term of fractal surfaces there was proved that irregularities of a potential (barrier) and an electric charge in real metal-semiconductor interfaces with Schottky barrier had a fractal geometry, which in a local approximation influenced greatly on a behavior of capacity-voltage characteristics of metal-semiconductor contacts with Schottky barrier exerting in an anomalous increase...
We have found out that current density distribution areally in a free contact (without a dielectric in circumferential direction) of semiconductor metal (SM) with Schottky barrier (SB) on the submicron level and the nanolevel is very incoherently. In the field of low currents with low tension the shift of the electrical circuit is determined by a narrow area (< 100 nm) in a circumferential direction...
The three assessment criterions of influence of an irregularity of a potential of a semiconductor surface on the efficiency of metal-semiconductor contacts with Shottky barrier were defined during the investigation. The principles of definition and methods of evaluation of efficiency of path of current flow in the metal-semiconductor contacts with Shottky barrier were developed.
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