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The development of the 100×4 micron transistor design, the nano-structured hetero-layered materials and the technology with 0.15 to 0.2 micron design rules has made possible the production of power GaN/AlGaN Ka-band HEMT's on silicon carbide substrates and measurements of their static and ultra-high-frequency characteristics (S-parameters). The HEMT parameters Gmax=8.89 dB and Pout∼ 450 mW achieved...
It is shown that taking the dimensional effect (fractal properties of epitaxial n-GaAs) into account in designing and manufacturing of the low-noise 1–8 GHz band Schottky-gate FET's with a larger gate length allows obtaining a higher power gain KU. The obtained results show the effectiveness of the proposed fractal approach in the designing of Schottky-gate FET's.
Numerical simulation based on the local field model was performed to study the starting mode of operation of a nanosecond pulsed Gunn oscillator. Deviations of the microwave oscillation phase in the oscillator with resistive load and with a resonator equivalent circuit were determined depending on the pulse rise time and amplitude of modulation voltage on the Gunn diode.
A new technique for optimizing the construction of power HEMTs (selection of unit channel width d and the number of sections N, etc.) is proposed and experimentally investigated. It consists in measuring (or simulating) microwave characteristics of the set of passive transistor structures with different values of d and N. Passive structures include all the metal elements of the HEMT, but does not...
Research of a Ka-band HEMT was conducted. HEMT's were manufactured with GaN/AlGaN heterostructures grown by MOCVD on sapphire substrates. A field-plate gate length and width was 0.15 µm and 400 µm correspondingly. A gate was placed between a drain and a source. Source contacts are connected to each other with double airbridges. It was shown that using of capsule layers i-GaN leads to ohmic contact...
It is shown that relief forms of surface and character of distribution of potential irregularities of epitaxial gallium arsenide and barrier Au-metallization have fractal geometry, which in a local approximation must be defined as geometry and homogeneity of metal -semiconductor contact interfaces with Shottky barrier. This must be considered while designing the submicron and nano metal-semiconductor...
With the use of a term of fractal surfaces there was showed that real metal-semiconductor interfaces with Shottky barrier had been provided with a fractal geometry that in a local approximation had influenced greatly on a behavior of static volt ampere characteristics of metal-semiconductor contacts with Shottky barrier, exerting in an anomalous increase of direct currents, a decrease of series resistance,...
With the use of a term of fractal surfaces there was proved that irregularities of a potential (barrier) and an electric charge in real metal-semiconductor interfaces with Schottky barrier had a fractal geometry, which in a local approximation influenced greatly on a behavior of capacity-voltage characteristics of metal-semiconductor contacts with Schottky barrier exerting in an anomalous increase...
We have found out that current density distribution areally in a free contact (without a dielectric in circumferential direction) of semiconductor metal (SM) with Schottky barrier (SB) on the submicron level and the nanolevel is very incoherently. In the field of low currents with low tension the shift of the electrical circuit is determined by a narrow area (< 100 nm) in a circumferential direction...
The three assessment criterions of influence of an irregularity of a potential of a semiconductor surface on the efficiency of metal-semiconductor contacts with Shottky barrier were defined during the investigation. The principles of definition and methods of evaluation of efficiency of path of current flow in the metal-semiconductor contacts with Shottky barrier were developed.
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