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In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows...
In this study, we investigated the kinetics and etched morphology on sapphire substrate by mixing acid solutions. We developed different etching conditions to produce various etching morphology patterns on sapphire surface. Then, GaN micro-rod embedded with quantum wells (QWs) were grown on the patterned sapphire surface. The cathode luminescence (CL) images of these QW embedded micro-rods have shown...
Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with three kinds of naturally textured surfaces were grown by atmosphere-pressure metalorganic chemical vapor deposition. The electroluminescence intensities of the 400-nm LED bare chips with nano-hole and micro-island textured morphologies show 30% and 40% in magnitude higher than that of the flat surface LED sample. Both textured surfaces...
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