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We present a CMOS compatible fabrication process which utilizes aluminum nitride with titanium electrodes for high-speed piezoelectric actuation. Aluminum nitride film morphology was improved by maintaining vacuum between film depositions and by the inclusion of an aluminum nitride interlayer. A rocking curve full-width at half-maximum of less than 3 degrees was achieved. Unimorph actuators were fabricated...
We present the design, fabrication and characterization of sub-micron piezoresistive silicon cantilevers for high frequency force detection. The cantilevers are fabricated by a simple three-mask process and doped using POCl3 diffusion, which enables high doping levels and negligible lattice damage. Devices have a force resolution of 298 pN from 1 Hz - 50 kHz (f0 = 187 kHz) and 678 pN up to 100 kHz...
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