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Si wafers with smooth Ti thin films were contacted in air atmosphere and annealed at a range of temperatures up to 300 °C to increase the bonding strength. Root-mean-square (RMS) surface roughness of 30 nm thick electron beam evaporated Ti films on Si wafers measured by atomic force microscope (AFM) was 0.3 nm. Bonding strength measured by blade insertion test reached 1.0 J/m2. The proposed wafer...
Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices. But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (~10 s) and followed by...
8-inch Si-Si wafer bonding at room temperature is performed by means of two modified surface activated bonding (SAB) methods respectively, namely the SAB with nano-adhesion layer and sequential plasma activated bonding (SPAB). And post-annealing processes in atmospheric air utilized do not aim to improve the bonding strength, but to investigate void formation if the bonded wafers heated in subsequent...
A novel method for bonding sapphire, LiNbO3, quartz and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and nano-adhesion Fe layers were deposited using a low energy argon ion beam simultaneously. The optical images show that the entire area of 4-inch wafers of LiNbO3/Si was bonded. Such images for other...
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