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A novel method for bonding sapphire, LiNbO3, quartz and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and nano-adhesion Fe layers were deposited using a low energy argon ion beam simultaneously. The optical images show that the entire area of 4-inch wafers of LiNbO3/Si was bonded. Such images for other...
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