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This study presents extensive thermal characterization of GaN/SiC devices from five US sources across temperature (-25degC to +125degC). The changes with temperature for: cutoff frequency (ft), maximum oscillation frequency (fmax), saturated current (Idss), transconductance (gm) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for ft, fmax,...
A broadband Ka-band AlGaN/GaN on SiC HEMT power amplifier MMIC was developed for millimeter-wave antenna applications. The output stage is composed of a 1.2-mm-wide device with 0.18 mum gate length. The two-stage 50-ohm matched MMIC produces 13plusmn1 dB of gain from 26 GHz to 36 GHz. At 35 GHz, the measured CW saturated output power was 4 W, indicating a power density of 3.3 W/mm. The power added...
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