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Static C-V and I-V characteristics related dynamic behaviors of power MOSFET. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, a model for SiC power MOSFET is proposed that includes the physics of semiconductor, physical structures of the device, and extracted parameters from the measured C-V characteristics. The static I-V characteristics are...
The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region thickness. This study develops a C - V characterization system for high-voltage power transistors (e.g., MOSFET, insulated gate bipolar transistor,...
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