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We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single overgrowth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83As double quantum well laser emitting ~980 nm. We then apply the fabrication technique to a quantum dot laser...
We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at 1.3 mum. Opto-electronic confinement provided by an InGaP layer results in single lateral mode emission.
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