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Nanoscale double-gate (DG) FinFETs with undoped fin bodies are shown to have threshold voltages (Vt) that can be adjusted for independent ION and IOFF control by allowing limited source/drain (S/D) dopants in the channel. S/D engineering of the lateral doping profile in the extension is proposed as a viable means for effecting such channel doping [as well as gate-S/D (G-S/D) underlap] and, thus,...
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